High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation
artículo
Fecha
2016Autor
Urcuyo Solórzano, Roberto
Duong, Dinh Loc
Jeong, Hye Yun
Burghard, Marko
Kern, Klaus
Metadatos
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Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias-induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes.
External link to the item
10.1002/aelm.201600223Colecciones
- Biología [1635]