• Phototransport Properties of a-SiC:H Alloys 

      Balberg, I.; Nery, Guillermo; Ramírez Porras, Arturo; Resto, O.; Weisz, S. Z.; Lubianiker, Y. (1995)
      We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the ...
    • Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon 

      Weisz, S. Z.; Ramírez Porras, Arturo; Gómez, Manuel; Many, A.; Goldstein, Yehuda; Savir, Esther (1997)
      Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
    • Stochastic approach to the smart quantum confinement model in porous silicon 

      Ramírez Porras, Arturo; Weisz, S. Z. (Surface Science 515 (2002) L509-L513, 2002)
      A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the ...