Phototransport Properties of a-SiC:H Alloys

dc.creator	Balberg, I.
dc.creator	Nery, Guillermo
dc.creator	Ramírez Porras, Arturo
dc.creator	Resto, O.
dc.creator	Weisz, S. Z.
dc.creator	Lubianiker, Y.
dc.date.accessioned	2020-01-31T21:13:12Z
dc.date.available	2020-01-31T21:13:12Z
dc.date.issued	1995
dc.description.abstract	We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.	es_ES
dc.description.procedence	UCR::Vicerrectoría de Docencia::Ciencias Básicas::Facultad de Ciencias::Escuela de Física	es_ES
dc.identifier.citation	https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/phototransport-properties-of-asich-alloys/319AB54D3CB8E22AE5D2E8487751BD56
dc.identifier.doi	10.1557/PROC-377-583
dc.identifier.issn	1946-4274
dc.identifier.uri	https://hdl.handle.net/10669/80435
dc.language.iso	en_US	es_ES
dc.rights	acceso embargado
dc.source	Materials Research Society Symposium Proceedings, 377, pp.583-588	es_ES
dc.subject	Amorphous silicon	es_ES
dc.subject	Alloys	es_ES
dc.title	Phototransport Properties of a-SiC:H Alloys	es_ES
dc.type	artículo original

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